BSP316PE6327T
  • Share:

Infineon Technologies BSP316PE6327T

Manufacturer No:
BSP316PE6327T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP316PE6327T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 680MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id:2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:146 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
58

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP316PE6327T BSP317PE6327T   BSP315PE6327T   BSP316PE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 250 V 60 V 100 V
Current - Continuous Drain (Id) @ 25°C 680mA (Ta) 430mA (Ta) 1.17A (Ta) 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 680mA, 10V 4Ohm @ 430mA, 10V 800mOhm @ 1.17A, 10V 1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id 2V @ 170µA 2V @ 370µA 2V @ 160µA 2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 10 V 15.1 nC @ 10 V 7.8 nC @ 10 V 6.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 146 pF @ 25 V 262 pF @ 25 V 160 pF @ 25 V 146 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4 PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

NVMYS6D2N06CLTWG
NVMYS6D2N06CLTWG
onsemi
MOSFET N-CH 60V 17A/71A 4LFPAK
TPW1R005PL,L1Q
TPW1R005PL,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 45V 300A 8DSOP
SSM3K7002KF,LF
SSM3K7002KF,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 400MA S-MINI
SIR178DP-T1-RE3
SIR178DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 20V 100A/430A PPAK
ZVP2110A
ZVP2110A
Diodes Incorporated
MOSFET P-CH 100V 230MA TO92-3
NTMJS1D5N04CLTWG
NTMJS1D5N04CLTWG
onsemi
MOSFET N-CH 40V 38A/200A 8LFPAK
ZXMP10A17GTA
ZXMP10A17GTA
Diodes Incorporated
MOSFET P-CH 100V 1.7A SOT223
IPD70R600CEAUMA1
IPD70R600CEAUMA1
Infineon Technologies
MOSFET N-CH 700V 10.5A TO252-3
IPP03N03LB G
IPP03N03LB G
Infineon Technologies
MOSFET N-CH 30V 80A TO220-3
AUIRL7766M2TR
AUIRL7766M2TR
Infineon Technologies
MOSFET N-CH 100V 10A DIRECTFET
AOW2502
AOW2502
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 150V 16A/106A TO262
RD3S100CNTL1
RD3S100CNTL1
Rohm Semiconductor
MOSFET N-CH 190V 10A TO252

Related Product By Brand

BSC096N10LS5ATMA1
BSC096N10LS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 40A TDSON-8-6
IRLR3110ZTRRPBF
IRLR3110ZTRRPBF
Infineon Technologies
MOSFET N-CH 100V 42A DPAK
IPT65R105G7XTMA1
IPT65R105G7XTMA1
Infineon Technologies
MOSFET N-CH 650V 24A 8HSOF
BSC205N10LS G
BSC205N10LS G
Infineon Technologies
MOSFET N-CH 100V 7.4A/45A TDSON
IRGP4690DPBF
IRGP4690DPBF
Infineon Technologies
IGBT 600V 140A TO247AC
PEB2447H-V12
PEB2447H-V12
Infineon Technologies
IC INTERFACE SPECIALIZED 100MQFP
IR2233S
IR2233S
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
IR2102STR
IR2102STR
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS500101TADATMA1
BTS500101TADATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO263-7
CY88155PFT-G-400-JN-ERE1
CY88155PFT-G-400-JN-ERE1
Infineon Technologies
IC CLOCK GENERATOR EMI 8TSSOP
MB90F548GSPFR-G-FL
MB90F548GSPFR-G-FL
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY7C1460KV33-200AXC
CY7C1460KV33-200AXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 100TQFP