BSP315PE6327T
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Infineon Technologies BSP315PE6327T

Manufacturer No:
BSP315PE6327T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP315PE6327T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 1.17A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.17A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id:2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP315PE6327T BSP316PE6327T   BSP317PE6327T  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 250 V
Current - Continuous Drain (Id) @ 25°C 1.17A (Ta) 680mA (Ta) 430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V 1.8Ohm @ 680mA, 10V 4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id 2V @ 160µA 2V @ 170µA 2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V 6.4 nC @ 10 V 15.1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 25 V 146 pF @ 25 V 262 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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