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| Part Number | BSP299H6327XUSA1 | BSP298H6327XUSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 400 V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) | 500mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 10V | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - | - |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V | 400 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.8W (Ta) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-SOT223-4 | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
