BSP297H6327XTSA1
  • Share:

Infineon Technologies BSP297H6327XTSA1

Manufacturer No:
BSP297H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP297H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 660MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:16.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:357 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.00
308

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP297H6327XTSA1 BSP295H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 60 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta) 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V 300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA 1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 357 pF @ 25 V 368 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

IPD65R400CEAUMA1
IPD65R400CEAUMA1
Infineon Technologies
MOSFET N-CH 650V 15.1A TO252-3
CPH6614-TL-E
CPH6614-TL-E
onsemi
P-CHANNEL SILICON MOSFET
FDD6N20TM
FDD6N20TM
onsemi
MOSFET N-CH 200V 4.5A DPAK
BUK7Y65-100EX
BUK7Y65-100EX
Nexperia USA Inc.
MOSFET N-CH 100V 19A LFPAK56
STB80NF10T4
STB80NF10T4
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
IPL65R130C7AUMA1
IPL65R130C7AUMA1
Infineon Technologies
MOSFET N-CH 650V 15A 4VSON
AON3402
AON3402
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 20V 12.6A 8DFN
IRFSL7534PBF
IRFSL7534PBF
Infineon Technologies
MOSFET N-CH 60V 195A TO262
SPB02N60C3ATMA1
SPB02N60C3ATMA1
Infineon Technologies
MOSFET N-CH 650V 1.8A TO263-3
IPU04N03LA
IPU04N03LA
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
BS7067N06LS3G
BS7067N06LS3G
Infineon Technologies
MOSFET N-CH 60V 14A/20A 8TSDSON
SI7718DN-T1-GE3
SI7718DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK1212-8

Related Product By Brand

BTS72002EPADAUGHBRDTOBO1
BTS72002EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7200-2EPA DAUG
D1821SH45TS05XOSA1
D1821SH45TS05XOSA1
Infineon Technologies
DIODE MODULE
TZ800N16KOFTIMHPSA1
TZ800N16KOFTIMHPSA1
Infineon Technologies
SCR MODULE 1800V 1500A MODULE
IPB051NE8NG
IPB051NE8NG
Infineon Technologies
N-CHANNEL POWER MOSFET
SPB10N10L G
SPB10N10L G
Infineon Technologies
MOSFET N-CH 100V 10.3A TO263-3
IRG4BC20F-SPBF
IRG4BC20F-SPBF
Infineon Technologies
IGBT 600V 16A 60W TO220-3
C161CSLFCAFXQMA2
C161CSLFCAFXQMA2
Infineon Technologies
IC MCU 16BIT 128TQFP
IPA60R190C6
IPA60R190C6
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
MB90594GHPFR-G-132-BND
MB90594GHPFR-G-132-BND
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
MB89636RPF-G-1492E1
MB89636RPF-G-1492E1
Infineon Technologies
IC MCU 8BIT 24KB MROM 64QFP
MB90922NCSPMC-GS-236E1
MB90922NCSPMC-GS-236E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
CY7C1520AV18-200BZC
CY7C1520AV18-200BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA