BSP297H6327XTSA1
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Infineon Technologies BSP297H6327XTSA1

Manufacturer No:
BSP297H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP297H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 660MA SOT223-4
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:16.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:357 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP297H6327XTSA1 BSP295H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 60 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta) 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V 300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA 1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 357 pF @ 25 V 368 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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