BSP295L6327HTSA1
  • Share:

Infineon Technologies BSP295L6327HTSA1

Manufacturer No:
BSP295L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP295L6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 1.8A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:368 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4-21
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
215

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP295L6327HTSA1 BSP296L6327HTSA1   BSP297L6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) 1.1A (Ta) 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V 700mOhm @ 1.1A, 10V 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA 1.8V @ 400µA 1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 17.2 nC @ 10 V 16.1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 368 pF @ 25 V 364 pF @ 25 V 357 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.8W (Ta) 1.79W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4-21 PG-SOT223-4 PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

BSS87,115
BSS87,115
Nexperia USA Inc.
MOSFET N-CH 200V 400MA SOT89
IRLZ14PBF
IRLZ14PBF
Vishay Siliconix
MOSFET N-CH 60V 10A TO220AB
NTTFS4C10NTAG
NTTFS4C10NTAG
onsemi
MOSFET N-CH 30V 8.2A/44A 8WDFN
IRFR010PBF
IRFR010PBF
Vishay Siliconix
MOSFET N-CH 50V 8.2A DPAK
STP120N4F6
STP120N4F6
STMicroelectronics
MOSFET N-CH 40V 80A TO220AB
STF21N65M5
STF21N65M5
STMicroelectronics
MOSFET N-CH 650V 17A TO220FP
YJL2304A-F2-0100HF
YJL2304A-F2-0100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 30V 3.6A SOT-23-3L
IRFZ44Z
IRFZ44Z
Infineon Technologies
MOSFET N-CH 55V 51A TO220AB
NTHD5904NT1G
NTHD5904NT1G
onsemi
MOSFET N-CH 20V 2.5A CHIPFET
APT35SM70S
APT35SM70S
Microsemi Corporation
SICFET 700V 35A TO247-3
RSD140P06TL
RSD140P06TL
Rohm Semiconductor
MOSFET P-CH 60V 14A CPT3
RRS090N03FU7TB1
RRS090N03FU7TB1
Rohm Semiconductor
MOSFET N-CH 30V 9A 8SOP

Related Product By Brand

BCW60DE6327
BCW60DE6327
Infineon Technologies
TRANS NPN 32V 0.1A SOT23
IRL3803
IRL3803
Infineon Technologies
MOSFET N-CH 30V 140A TO220AB
IRLR3714ZTR
IRLR3714ZTR
Infineon Technologies
MOSFET N-CH 20V 37A DPAK
IPI03N03LA
IPI03N03LA
Infineon Technologies
MOSFET N-CH 25V 80A TO262-3
IRF6724MTR1PBF
IRF6724MTR1PBF
Infineon Technologies
MOSFET N-CH 30V 27A DIRECTFET
SLE88CFX4000PDSO20ZZZA1
SLE88CFX4000PDSO20ZZZA1
Infineon Technologies
IC SECURITY CTRLR 32BIT DSO-20
XE162HN24F80LAAKXUMA1
XE162HN24F80LAAKXUMA1
Infineon Technologies
IC MCU 16BIT 192KB FLASH 64LQFP
IRSM808-105MH
IRSM808-105MH
Infineon Technologies
IC MOTOR DRIVER 500V QFN
BGS12PL6E6327XTSA1
BGS12PL6E6327XTSA1
Infineon Technologies
IC RF SWITCH SPDT 4GHZ TSLP6-4
CY7C1262XV18-450BZXC
CY7C1262XV18-450BZXC
Infineon Technologies
NO WARRANTY
S29AL008J70BAI010
S29AL008J70BAI010
Infineon Technologies
IC FLASH 8MBIT PARALLEL 48FBGA
CY7C1020CV33-10ZXCT
CY7C1020CV33-10ZXCT
Infineon Technologies
IC SRAM 512KBIT PAR 44TSOP II