BSP295H6327XTSA1
  • Share:

Infineon Technologies BSP295H6327XTSA1

Manufacturer No:
BSP295H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP295H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 1.8A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:368 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.06
416

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP295H6327XTSA1 BSP297H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 200 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.8A, 10V 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA 1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 16.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 368 pF @ 25 V 357 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

FDD6N20TM
FDD6N20TM
onsemi
MOSFET N-CH 200V 4.5A DPAK
SI7434DP-T1-GE3
SI7434DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 250V 2.3A PPAK SO-8
NTD20P06LT4G
NTD20P06LT4G
onsemi
MOSFET P-CH 60V 15.5A DPAK
NVMFS5C468NWFT1G
NVMFS5C468NWFT1G
onsemi
MOSFET N-CH 40V 12A/35A 5DFN
FQB7P20TM-F085
FQB7P20TM-F085
onsemi
MOSFET P-CH 200V 7.3A D2PAK
IRFIBC40G
IRFIBC40G
Vishay Siliconix
MOSFET N-CH 600V 3.5A TO220-3
IRL540STRR
IRL540STRR
Vishay Siliconix
MOSFET N-CH 100V 28A D2PAK
FQB5N20LTM
FQB5N20LTM
onsemi
MOSFET N-CH 200V 4.5A D2PAK
IRF6645TR1PBF
IRF6645TR1PBF
Infineon Technologies
MOSFET N-CH 100V 5.7A DIRECTFET
BSP92P E6327
BSP92P E6327
Infineon Technologies
MOSFET P-CH 250V 260MA SOT223-4
NTF2955PT1G
NTF2955PT1G
onsemi
MOSFET P-CH 60V 1.7A SOT-223
SCT3017ALGC11
SCT3017ALGC11
Rohm Semiconductor
650V, 118A, THD, TRENCH-STRUCTUR

Related Product By Brand

BFR 181T E6327
BFR 181T E6327
Infineon Technologies
RF TRANS NPN 12V 8GHZ SC75
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
AUIRF1324STRL7P
AUIRF1324STRL7P
Infineon Technologies
AUIRF1324 - 20V-40V N-CHANNEL AU
SAF-XE167H-96F66LABES
SAF-XE167H-96F66LABES
Infineon Technologies
16-BIT FLASH RISC MCU
2EDN7524GXTMA1
2EDN7524GXTMA1
Infineon Technologies
IC GATE DRVR LOW-SIDE 8WSON
PVD1352
PVD1352
Infineon Technologies
SSR RELAY SPST-NO 500MA 0-100V
MB89663RPF-G-202-BND
MB89663RPF-G-202-BND
Infineon Technologies
IC MCU 8BIT 8KB MROM 64QFP
MB91213APMC-GS-102K5E1
MB91213APMC-GS-102K5E1
Infineon Technologies
IC MCU 32BIT 544KB MROM 144LQFP
MB91213APMC-GS-193K5E1
MB91213APMC-GS-193K5E1
Infineon Technologies
IC MCU 32BIT 544KB MROM 144LQFP
S6E2CCAH0AGV20000
S6E2CCAH0AGV20000
Infineon Technologies
IC MCU 32BIT 2MB FLASH 144LQFP
S25FL256SAGBHIY03
S25FL256SAGBHIY03
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
CY14B104N-BA45XIT
CY14B104N-BA45XIT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA