BSP179H6327XTSA1
  • Share:

Infineon Technologies BSP179H6327XTSA1

Manufacturer No:
BSP179H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP179H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 210MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:18Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id:1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.41
925

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP179H6327XTSA1 BSP129H6327XTSA1   BSP149H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 240 V 200 V
Current - Continuous Drain (Id) @ 25°C 210mA (Ta) 350mA (Ta) 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 0V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 18Ohm @ 210mA, 10V 6Ohm @ 350mA, 10V 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1V @ 94µA 1V @ 108µA 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 5 V 5.7 nC @ 5 V 14 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V 108 pF @ 25 V 430 pF @ 25 V
FET Feature Depletion Mode Depletion Mode Depletion Mode
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

TP65H300G4LSG
TP65H300G4LSG
Transphorm
GANFET N-CH 650V 6.5A 3PQFN
5N20A
5N20A
Goford Semiconductor
N200V,RD(MAX)<650M@10V,VTH1V~3V,
PSMN016-100YS,115
PSMN016-100YS,115
Nexperia USA Inc.
MOSFET N-CH 100V 51A LFPAK56
IPP028N08N3GHKSA1
IPP028N08N3GHKSA1
Infineon Technologies
N-CHANNEL POWER MOSFET
FQPF7N65C
FQPF7N65C
onsemi
MOSFET N-CH 650V 7A TO220F
PMV60EN,215
PMV60EN,215
NXP USA Inc.
MOSFET N-CH 30V 4.7A TO236AB
IRFR9220TRR
IRFR9220TRR
Vishay Siliconix
MOSFET P-CH 200V 3.6A DPAK
STW80NF06
STW80NF06
STMicroelectronics
MOSFET N-CH 60V 80A TO247-3
MTW32N20EG
MTW32N20EG
onsemi
MOSFET N-CH 200V 32A TO247
NTMFS4846NT3G
NTMFS4846NT3G
onsemi
MOSFET N-CH 30V 12.7A/100A 5DFN
BUK965R4-40E,118
BUK965R4-40E,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A D2PAK
RSS090N03FRATB
RSS090N03FRATB
Rohm Semiconductor
MOSFET N-CH 30V 9A 8SOP

Related Product By Brand

BAR6406WE6327HTSA1
BAR6406WE6327HTSA1
Infineon Technologies
RF DIODE PIN 150V 250MW SOT323-3
BSZ123N08NS3GATMA1
BSZ123N08NS3GATMA1
Infineon Technologies
MOSFET N-CH 80V 10A/40A 8TSDSON
SPD08N50C3
SPD08N50C3
Infineon Technologies
COOLMOS, 7.6A, 500V, 0.6OHM, N-C
IRF6612TR1PBF
IRF6612TR1PBF
Infineon Technologies
MOSFET N-CH 30V 24A DIRECTFET
IPB13N03LB G
IPB13N03LB G
Infineon Technologies
MOSFET N-CH 30V 30A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
SAF-TC1115-L150EB BB
SAF-TC1115-L150EB BB
Infineon Technologies
IC MCU 32BIT ROMLESS 208LBGA
IRS2092SPBF
IRS2092SPBF
Infineon Technologies
IC AMP CLASS D MONO 16SOIC
IRU1030-33CT
IRU1030-33CT
Infineon Technologies
IC REG LINEAR 3.3V 3A TO220AB
CY2291FX
CY2291FX
Infineon Technologies
IC 3PLL EPROM CLOCK GEN 20-SOIC
CY90922NCSPMC-GS-198E1-ND
CY90922NCSPMC-GS-198E1-ND
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
S25FL256LAGMFB001
S25FL256LAGMFB001
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC