BSP171PL6327HTSA1
  • Share:

Infineon Technologies BSP171PL6327HTSA1

Manufacturer No:
BSP171PL6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP171PL6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 1.9A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2V @ 460µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4-21
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
322

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP171PL6327HTSA1 BSP170PL6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.9A, 10V 300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 460µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 25 V 410 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4-21 PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

MIC94052YC6-TR
MIC94052YC6-TR
Microchip Technology
MOSFET P-CH 6V 2A SC70-6
PJD30N15_L2_00001
PJD30N15_L2_00001
Panjit International Inc.
150V N-CHANNEL ENHANCEMENT MODE
HUFA76429D3ST
HUFA76429D3ST
Fairchild Semiconductor
MOSFET N-CH 60V 20A TO252AA
IPD50R500CEAUMA1
IPD50R500CEAUMA1
Infineon Technologies
MOSFET N-CH 550V 7.6A TO252
IPA50R280CEXKSA2
IPA50R280CEXKSA2
Infineon Technologies
MOSFET N-CH 500V 7.5A TO220
BSZ180P03NS3GATMA1
BSZ180P03NS3GATMA1
Infineon Technologies
MOSFET P-CH 30V 9A/39.6A TSDSON
IXFP22N65X2M
IXFP22N65X2M
IXYS
MOSFET N-CH 650V 22A TO220
APT30F50S
APT30F50S
Microchip Technology
MOSFET N-CH 500V 30A D3PAK
BUK7506-55A,127
BUK7506-55A,127
NXP Semiconductors
MOSFET N-CH 55V 75A TO220AB
IRF7421D1TR
IRF7421D1TR
Infineon Technologies
MOSFET N-CH 30V 5.8A 8SO
IRLS3036PBF
IRLS3036PBF
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
BUK6Y57-60PX
BUK6Y57-60PX
Nexperia USA Inc.
MOSFET P-CH 60V 23A LFPAK56

Related Product By Brand

KITXMC44EE1001TOBO1
KITXMC44EE1001TOBO1
Infineon Technologies
HEXAGON ENT KIT XMC4400 EVAL BRD
BSZ024N04LS6ATMA1
BSZ024N04LS6ATMA1
Infineon Technologies
MOSFET N-CH 40V 24A/40A TSDSON
IRFB3306GPBF
IRFB3306GPBF
Infineon Technologies
MOSFET N-CH 60V 120A TO220AB
IPW60R120C7XKSA1
IPW60R120C7XKSA1
Infineon Technologies
MOSFET N-CH 600V 19A TO247-3
IRF7403TR
IRF7403TR
Infineon Technologies
MOSFET N-CH 30V 8.5A 8SO
FF1000R17IE4BOSA1
FF1000R17IE4BOSA1
Infineon Technologies
IGBT MODULE 1700V 6250W
IR21365STRPBF
IR21365STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
MB90548GPFR-G-259-BND
MB90548GPFR-G-259-BND
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB90349ESPMC-GS-278E1
MB90349ESPMC-GS-278E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
CY96F623RBPMC-GS-UJE2
CY96F623RBPMC-GS-UJE2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 64LQFP
S25FL256SDPMFV013
S25FL256SDPMFV013
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
FM25VN10-GTR
FM25VN10-GTR
Infineon Technologies
IC FRAM 1MBIT SPI 40MHZ 8SOIC