BSP171PE6327T
  • Share:

Infineon Technologies BSP171PE6327T

Manufacturer No:
BSP171PE6327T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP171PE6327T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 1.9A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2V @ 460µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
181

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP171PE6327T BSP170PE6327T   BSP171PE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) 1.9A (Ta) 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.9A, 10V 300mOhm @ 1.9A, 10V 300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 460µA 4V @ 250µA 2V @ 460µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 14 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 25 V 410 pF @ 25 V 460 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

MMFT1N10ET3
MMFT1N10ET3
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
RJK4006DPP-G1#T2
RJK4006DPP-G1#T2
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
TQM150NB04CR RLG
TQM150NB04CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 10A/41A PDFN56U
STL33N65M2
STL33N65M2
STMicroelectronics
MOSFET N-CH 650V 20A PWRFLAT HV
FQP30N06L
FQP30N06L
onsemi
MOSFET N-CH 60V 32A TO220-3
IPB033N10N5LFATMA1
IPB033N10N5LFATMA1
Infineon Technologies
MOSFET N-CH 100V 120A TO263-3
CSD15571Q2
CSD15571Q2
Texas Instruments
MOSFET N-CH 20V 22A 6SON
IRFF433
IRFF433
Harris Corporation
N-CHANNEL POWER MOSFET
ISP12DP06NMXTSA1
ISP12DP06NMXTSA1
Infineon Technologies
MOSFET P-CH 60V 2.8A SOT223-4
STB60NF10-1
STB60NF10-1
STMicroelectronics
MOSFET N-CH 100V 80A I2PAK
IRF9540NSTRR
IRF9540NSTRR
Infineon Technologies
MOSFET P-CH 100V 23A D2PAK
NVD6495NLT4G
NVD6495NLT4G
onsemi
MOSFET N-CH 100V 25A DPAK

Related Product By Brand

BC849CWE6327HTSA1
BC849CWE6327HTSA1
Infineon Technologies
TRANS NPN 30V 0.1A SOT-323
SPP24N60C3XKSA1
SPP24N60C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 24.3A TO220-3
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 60A TDSON
IPW60R125P6
IPW60R125P6
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR
FX161CJ16F40FBBXT
FX161CJ16F40FBBXT
Infineon Technologies
LEGACY 16-BIT MCU
CY8C24794-24LTXI
CY8C24794-24LTXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 56QFN
CY96F613RBPMC-GS-UJE2
CY96F613RBPMC-GS-UJE2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 48LQFP
CY14B101Q2A-SXI
CY14B101Q2A-SXI
Infineon Technologies
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
S25FL256LAGBHI020
S25FL256LAGBHI020
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
CY7C1061GE18-15ZSXI
CY7C1061GE18-15ZSXI
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II
CY7C1411KV18-250BZC
CY7C1411KV18-250BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY9BF104RAPMC-GE1
CY9BF104RAPMC-GE1
Infineon Technologies
IC MEM MM MCU 120LQFP