BSP149L6327HTSA1
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Infineon Technologies BSP149L6327HTSA1

Manufacturer No:
BSP149L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP149L6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 660MA SOT223-4
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id:1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4-21
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP149L6327HTSA1 BSP129L6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 240 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1V @ 400µA 1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V 5.7 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V 108 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4-21 PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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