Infineon Technologies-BSP149 E6327 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	0V, 10V
Rds On (Max) @ Id, Vgs:	1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id:	1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:	14 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	430 pF @ 25 V
FET Feature:	Depletion Mode
Power Dissipation (Max):	1.8W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223-4
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies BSP149 E6327