BSP135H6327XTSA1
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Infineon Technologies BSP135H6327XTSA1

Manufacturer No:
BSP135H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP135H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 120MA SOT223-4
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:4.9 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:146 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP135H6327XTSA1 BSP125H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta) 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id 1V @ 94µA 2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs 4.9 nC @ 5 V 6.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 146 pF @ 25 V 150 pF @ 25 V
FET Feature Depletion Mode -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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