BSP135H6327XTSA1
  • Share:

Infineon Technologies BSP135H6327XTSA1

Manufacturer No:
BSP135H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP135H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 120MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:4.9 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:146 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.74
442

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP135H6327XTSA1 BSP125H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta) 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id 1V @ 94µA 2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs 4.9 nC @ 5 V 6.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 146 pF @ 25 V 150 pF @ 25 V
FET Feature Depletion Mode -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

EPC2218
EPC2218
EPC
GANFET N-CH 100V DIE
UPA2520T1H-T2-AT
UPA2520T1H-T2-AT
Renesas Electronics America Inc
MOSFET N-CH 30V 10A 8VSOF
CSD17312Q5
CSD17312Q5
Texas Instruments
MOSFET N-CH 30V 38A/100A 8VSON
BSZ0909NSATMA1
BSZ0909NSATMA1
Infineon Technologies
MOSFET N-CH 34V 9A/36A 8TSDSON
STB11NK40ZT4
STB11NK40ZT4
STMicroelectronics
MOSFET N-CH 400V 9A D2PAK
IRFSL7440PBF
IRFSL7440PBF
Infineon Technologies
MOSFET N CH 40V 120A TO-262
PSMN030-150P,127
PSMN030-150P,127
Nexperia USA Inc.
MOSFET N-CH 150V 55.5A TO220AB
SI5447DC-T1-E3
SI5447DC-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 3.5A 1206-8
TK60D08J1(Q)
TK60D08J1(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 75V 60A TO220
FQP6N60C_F080
FQP6N60C_F080
onsemi
MOSFET N-CH 600V 5.5A TO220-3
IRF7220GTRPBF
IRF7220GTRPBF
Infineon Technologies
MOSFET P-CH 14V 11A 8SO
TSM2N60ECH C5G
TSM2N60ECH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 2A TO251

Related Product By Brand

BF998RE6327HTSA1
BF998RE6327HTSA1
Infineon Technologies
MOSFET N-CH RF 12V 30MA SOT-143
IPB180N06S4H1ATMA2
IPB180N06S4H1ATMA2
Infineon Technologies
MOSFET N-CH 60V 180A TO263-7
AUIRFS4010-7P
AUIRFS4010-7P
Infineon Technologies
MOSFET N-CH 100V 190A D2PAK
IRF3711ZCSTRL
IRF3711ZCSTRL
Infineon Technologies
MOSFET N-CH 20V 92A D2PAK
IPI60R299CPXKSA1
IPI60R299CPXKSA1
Infineon Technologies
MOSFET N-CH 600V 11A TO262-3
IRL7833STRRPBF
IRL7833STRRPBF
Infineon Technologies
MOSFET N-CH 30V 150A D2PAK
IRFS17N20DTRLP
IRFS17N20DTRLP
Infineon Technologies
MOSFET N-CH 200V 16A D2PAK
FS3L25R12W2H3B11BPSA1
FS3L25R12W2H3B11BPSA1
Infineon Technologies
IGBT MOD 1200V 40A 175W
TLE4276DV50ATMA2
TLE4276DV50ATMA2
Infineon Technologies
IC REG LINEAR 5V 400MA TO252-5
MB89636RPF-G-617-BNDE1
MB89636RPF-G-617-BNDE1
Infineon Technologies
IC MCU 8BIT 24KB MROM 64QFP
CY14V101LA-BA45XI
CY14V101LA-BA45XI
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48FBGA
CY7C1513JV18-250BZXC
CY7C1513JV18-250BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA