BSP129L6327
  • Share:

Infineon Technologies BSP129L6327

Manufacturer No:
BSP129L6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSP129L6327 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):240 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id:1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:5.7 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:108 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.26
185

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP129L6327 BSP125L6327   BSP129E6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V - 240 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) - 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V - 0V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V - 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1V @ 108µA - 1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 5 V - 5.7 nC @ 5 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 108 pF @ 25 V - 108 pF @ 25 V
FET Feature Depletion Mode - Depletion Mode
Power Dissipation (Max) 1.8W (Ta) - 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-SOT223-4 - PG-SOT223-4
Package / Case TO-261-4, TO-261AA - TO-261-4, TO-261AA

Related Product By Categories

UPA2719GR-E1-AT
UPA2719GR-E1-AT
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IPU80R1K4P7AKMA1
IPU80R1K4P7AKMA1
Infineon Technologies
MOSFET N-CH 800V 4A TO251-3
FQB27N25TM-F085
FQB27N25TM-F085
Fairchild Semiconductor
FQB27N25 - N-CHANNEL ULTRAFET 25
FCHD040N65S3-F155
FCHD040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247
AUIRFS8407-7P
AUIRFS8407-7P
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK-7
STF20N95K5
STF20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO220FP
RFD15P05
RFD15P05
onsemi
MOSFET P-CH 50V 15A I-PAK
STP12NM50N
STP12NM50N
STMicroelectronics
MOSFET N-CH 500V 11A TO220AB
IPI60R299CPXKSA1
IPI60R299CPXKSA1
Infineon Technologies
MOSFET N-CH 600V 11A TO262-3
IPA60R800CEXKSA1
IPA60R800CEXKSA1
Infineon Technologies
MOSFET N-CH 600V 5.6A TO220-FP
SIS626DN-T1-GE3
SIS626DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 16A PPAK1212-8
PMR780SN,115
PMR780SN,115
NXP USA Inc.
MOSFET N-CH 60V 550MA SC75

Related Product By Brand

IKCM30F60GDXKMA1
IKCM30F60GDXKMA1
Infineon Technologies
IFPS MODULE 600V 30A 24PWRDIP
IPD90P04P4L04ATMA2
IPD90P04P4L04ATMA2
Infineon Technologies
MOSFET P-CH 40V 90A TO252-3
IPB65R310CFDAATMA1
IPB65R310CFDAATMA1
Infineon Technologies
MOSFET N-CH 650V 11.4A D2PAK
IRFR3412PBF
IRFR3412PBF
Infineon Technologies
MOSFET N-CH 100V 48A DPAK
BSO613SPVGHUMA1
BSO613SPVGHUMA1
Infineon Technologies
MOSFET P-CH 60V 3.44A 8DSO
AUIRFS3004
AUIRFS3004
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK-3
TLE42662GHTMA2
TLE42662GHTMA2
Infineon Technologies
IC REG LINEAR 5V 150MA SOT223-4
CY2XP24ZXCT
CY2XP24ZXCT
Infineon Technologies
IC CLOCK GEN PLL LVPECL 8TSSOP
MB95F876KPMC-G-SNE2
MB95F876KPMC-G-SNE2
Infineon Technologies
IC MCU 8BIT 36KB FLASH 48LQFP
MB96F356RWBPMC1-GSE2
MB96F356RWBPMC1-GSE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 64LQFP
CY7C1412KV18-250BZXI
CY7C1412KV18-250BZXI
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY62147EV30LL-45B2XAT
CY62147EV30LL-45B2XAT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA