BSP125 E6327
  • Share:

Infineon Technologies BSP125 E6327

Manufacturer No:
BSP125 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP125 E6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 120MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
411

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP125 E6327 BSP135 E6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta) 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94µA 1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V 4.9 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 146 pF @ 25 V
FET Feature - Depletion Mode
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

SSM6P16FE(TE85L,F)
SSM6P16FE(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 0.1A ES6
BUK9605-30A,118
BUK9605-30A,118
Nexperia USA Inc.
NEXPERIA BUK9605-30A - POWER FIE
IXTH150N15X4
IXTH150N15X4
IXYS
MOSFET N-CH 150V 150A TO247
STP8NM50N
STP8NM50N
STMicroelectronics
MOSFET N-CH 500V 5A TO220AB
PHB45NQ10T,118
PHB45NQ10T,118
Nexperia USA Inc.
MOSFET N-CH 100V 47A D2PAK
IXFB44N100Q3
IXFB44N100Q3
IXYS
MOSFET N-CH 1000V 44A PLUS264
APT58M50JU3
APT58M50JU3
Microchip Technology
MOSFET N-CH 500V 58A SOT227
STP190N55LF3
STP190N55LF3
STMicroelectronics
MOSFET N-CH 55V 120A TO220-3
IRFZ48S
IRFZ48S
Vishay Siliconix
MOSFET N-CH 60V 50A D2PAK
IRF7453TR
IRF7453TR
Infineon Technologies
MOSFET N-CH 250V 2.2A 8SO
BSS225
BSS225
Infineon Technologies
MOSFET N-CH 600V 90MA SOT89
NTMFS4898NFT1G
NTMFS4898NFT1G
onsemi
MOSFET N-CH 30V SO-8FL

Related Product By Brand

ESD8V0R1B02LRHE6327XTSA1
ESD8V0R1B02LRHE6327XTSA1
Infineon Technologies
TVS DIODE 14VWM 28VC TSLP-2
TLD5190VOLTDEMOTOBO1
TLD5190VOLTDEMOTOBO1
Infineon Technologies
H-BRIDGE MINI VOLTAGE REGULATOR
DD260N12KAHPSA1
DD260N12KAHPSA1
Infineon Technologies
DIODE ARRAY MOD 1700V 410A
BC858CE6327HTSA1
BC858CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT-23
IPP65R190E6XKSA1
IPP65R190E6XKSA1
Infineon Technologies
MOSFET N-CH 650V 20.2A TO220-3
TLE4208GXUMA1
TLE4208GXUMA1
Infineon Technologies
IC MOTOR DRIVER 5V-18V 28DSO
ITS5215LCUMA1
ITS5215LCUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
CY22801KSXC-021T
CY22801KSXC-021T
Infineon Technologies
IC CLOCK GENERATOR
CY25404ZXI-003T
CY25404ZXI-003T
Infineon Technologies
IC CLOCK GENERATOR
CY8C5468AXI-LP106
CY8C5468AXI-LP106
Infineon Technologies
IC MCU 32BIT 256KB FLASH 100TQFP
MB90347ASPF-GS-137-ER
MB90347ASPF-GS-137-ER
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
STK14CA8-NF35
STK14CA8-NF35
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC