BSP123L6327HTSA1
  • Share:

Infineon Technologies BSP123L6327HTSA1

Manufacturer No:
BSP123L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP123L6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 370MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.79W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
116

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP123L6327HTSA1 BSP125L6327HTSA1   BSP129L6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 600 V 240 V
Current - Continuous Drain (Id) @ 25°C 370mA (Ta) 120mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 4.5V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 370mA, 10V 45Ohm @ 120mA, 10V 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA 2.3V @ 94µA 1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V 6.6 nC @ 10 V 5.7 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 25 V 150 pF @ 25 V 108 pF @ 25 V
FET Feature - - Depletion Mode
Power Dissipation (Max) 1.79W (Ta) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4-21 PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

DMN2990UFZ-7B
DMN2990UFZ-7B
Diodes Incorporated
MOSFET N-CH 20V 250MA 3DFN
BSD314SPE L6327
BSD314SPE L6327
Infineon Technologies
P-CHANNEL MOSFET
BSC882N03MSG
BSC882N03MSG
Infineon Technologies
N-CHANNEL POWER MOSFET
SCH1430-TL-W
SCH1430-TL-W
onsemi
SCH1430 - POWER MOSFET, 20V, 2A,
SI7852ADP-T1-E3
SI7852ADP-T1-E3
Vishay Siliconix
MOSFET N-CH 80V 30A PPAK SO-8
DMP2305U-7
DMP2305U-7
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23-3
IRF9640PBF-BE3
IRF9640PBF-BE3
Vishay Siliconix
MOSFET P-CH 200V 11A TO220AB
IXTA150N15X4-7
IXTA150N15X4-7
IXYS
MOSFET N-CH 150V 150A TO263-7
FQD2N60CTF
FQD2N60CTF
Fairchild Semiconductor
MOSFET N-CH 600V 1.9A DPAK
NTMFS08N003C
NTMFS08N003C
onsemi
MOSFET N-CH 80V 22A/147A POWER56
IRFR014TRL
IRFR014TRL
Vishay Siliconix
MOSFET N-CH 60V 7.7A DPAK
IRFR5505CPBF
IRFR5505CPBF
Infineon Technologies
MOSFET P-CH 55V 18A DPAK

Related Product By Brand

IDH16G65C5XKSA2
IDH16G65C5XKSA2
Infineon Technologies
DIODE SCHOTKY 650V 16A TO220-2-1
IRF7606TR
IRF7606TR
Infineon Technologies
MOSFET P-CH 30V 3.6A MICRO8
IRFH5250DTRPBF
IRFH5250DTRPBF
Infineon Technologies
MOSFET N-CH 25V 40A/100A 8PQFN
BTS282ZE3230
BTS282ZE3230
Infineon Technologies
N-CHANNEL POWER MOSFET
BSP316PE6327
BSP316PE6327
Infineon Technologies
MOSFET P-CH 100V 680MA SOT223-4
IRF7467PBF
IRF7467PBF
Infineon Technologies
MOSFET N-CH 30V 11A 8SO
ICE5QR4770AGXUMA1
ICE5QR4770AGXUMA1
Infineon Technologies
IC OFFLINE SWITCH FLYBACK 12DSO
CY37512P208-125NXC
CY37512P208-125NXC
Infineon Technologies
IC CPLD 512MC 10NS 208BQFP
CY8C3866LTI-207T
CY8C3866LTI-207T
Infineon Technologies
IC MCU 8BIT 64KB FLASH 68QFN
MB90P224BPF-GT-5283
MB90P224BPF-GT-5283
Infineon Technologies
IC MCU 16BIT 96KB OTP 120PQFP
CY9AF1A2LPMC-G-SNE2
CY9AF1A2LPMC-G-SNE2
Infineon Technologies
IC MCU 32BIT 128KB FLASH 64LQFP
CY7C1415BV18-167BZI
CY7C1415BV18-167BZI
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA