BSP123E6327T
  • Share:

Infineon Technologies BSP123E6327T

Manufacturer No:
BSP123E6327T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP123E6327T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 370MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.79W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
73

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP123E6327T BSP129E6327T  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 240 V
Current - Continuous Drain (Id) @ 25°C 370mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 370mA, 10V 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA 1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V 5.7 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 25 V 108 pF @ 25 V
FET Feature - Depletion Mode
Power Dissipation (Max) 1.79W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

FQPF9P25
FQPF9P25
onsemi
MOSFET P-CH 250V 6A TO220F-3
PJA3415A-AU_R1_000A1
PJA3415A-AU_R1_000A1
Panjit International Inc.
SOT-23, MOSFET
DMN2500UFB4-7
DMN2500UFB4-7
Diodes Incorporated
MOSFET N-CH 20V 810MA 3DFN
SPP20N60S5XKSA1
SPP20N60S5XKSA1
Infineon Technologies
HIGH POWER_LEGACY
CSD18512Q5BT
CSD18512Q5BT
Texas Instruments
MOSFET N-CH 40V 211A 8VSON
FDS3512
FDS3512
onsemi
MOSFET N-CH 80V 4A 8SOIC
NVD6416ANLT4G
NVD6416ANLT4G
Fairchild Semiconductor
MOSFET N-CH 100V 19A DPAK
IQE006NE2LM5CGATMA1
IQE006NE2LM5CGATMA1
Infineon Technologies
MOSFET N-CH 25V 41A/298A IPAK
C3M0040120J1
C3M0040120J1
Wolfspeed, Inc.
1200V 40 M SIC MOSFET
BUK9Y11-30B,115
BUK9Y11-30B,115
Nexperia USA Inc.
MOSFET N-CH 30V 59A LFPAK56
2SK4124-1E
2SK4124-1E
onsemi
MOSFET N-CH 500V 20A TO3P-3L
RQ6E035TNTR
RQ6E035TNTR
Rohm Semiconductor
MOSFET N-CH 30V 3.5A TSMT6

Related Product By Brand

IRF7301PBF
IRF7301PBF
Infineon Technologies
MOSFET 2N-CH 20V 5.2A 8-SOIC
SPB03N60S5
SPB03N60S5
Infineon Technologies
N-CHANNEL POWER MOSFET
IPN60R2K0PFD7SATMA1
IPN60R2K0PFD7SATMA1
Infineon Technologies
MOSFET N-CH 650V 3A SOT223
BSC889N03LSGATMA1
BSC889N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 13A/45A TDSON
ADM6926X-AB-T-1
ADM6926X-AB-T-1
Infineon Technologies
IC ETHERNET SW CTRLR 128QFP
ICE3B0365JFKLA1
ICE3B0365JFKLA1
Infineon Technologies
IC OFFLINE SWITCH FLYBACK 8DIP
CHL8328-35CRT
CHL8328-35CRT
Infineon Technologies
IC REG CTRLR DDR 2OUT 56VQFN
TLE9471ESV33XUMA1
TLE9471ESV33XUMA1
Infineon Technologies
IC TXRX CAN LITE SBC 2MBPS
MB90025FPMT-GS-383E1
MB90025FPMT-GS-383E1
Infineon Technologies
IC MCU 120LQFP
MB89537APMC-G-1095E1
MB89537APMC-G-1095E1
Infineon Technologies
IC MCU 8BIT 32KB MROM 64LQFP
CY14B116N-BZ25XI
CY14B116N-BZ25XI
Infineon Technologies
NO WARRANTY
CY14MB064J2A-SXI
CY14MB064J2A-SXI
Infineon Technologies
IC NVSRAM 64KBIT I2C 8SOIC