Infineon Technologies-BSO615N - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	2.6A
Rds On (Max) @ Id, Vgs:	150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id:	2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	380pF @ 25V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	PG-DSO-8

Infineon Technologies BSO615N