Infineon Technologies-BSO615CT - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	3.1A, 2A
Rds On (Max) @ Id, Vgs:	110mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:	2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:	22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	380pF @ 25V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	PG-DSO-8

Infineon Technologies BSO615CT