Infineon Technologies-BSO612CVGHUMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	3A, 2A
Rds On (Max) @ Id, Vgs:	120mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:	15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	340pF @ 25V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	PG-DSO-8

Infineon Technologies BSO612CVGHUMA1