BSO4822T
  • Share:

Infineon Technologies BSO4822T

Manufacturer No:
BSO4822T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSO4822T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 12.7A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs:26.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-DSO-8
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
302

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSO4822T BSO4822  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta) 12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 12.7A, 10V 10mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 2V @ 55µA 2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs 26.2 nC @ 5 V 26.2 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 25 V 1640 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-DSO-8 PG-DSO-8
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

SPD04N60C2
SPD04N60C2
Infineon Technologies
N-CHANNEL POWER MOSFET
2SK2485-A
2SK2485-A
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
IRFR9024TRPBF
IRFR9024TRPBF
Vishay Siliconix
MOSFET P-CH 60V 8.8A DPAK
NTH4L040N120SC1
NTH4L040N120SC1
onsemi
SICFET N-CH 1200V 58A TO247-4
DMN3026LVT-7
DMN3026LVT-7
Diodes Incorporated
MOSFET N-CH 30V 6.6A TSOT26
SI7818DN-T1-E3
SI7818DN-T1-E3
Vishay Siliconix
MOSFET N-CH 150V 2.2A PPAK1212-8
DMN62D0UWQ-13
DMN62D0UWQ-13
Diodes Incorporated
MOSFET N-CH 60V 340MA SOT323
IXFR30N50Q
IXFR30N50Q
IXYS
MOSFET N-CH 500V 30A ISOPLUS247
NTD4904N-35G
NTD4904N-35G
onsemi
MOSFET N-CH 30V 13A/79A IPAK
2SK3747-1E
2SK3747-1E
onsemi
MOSFET N-CH 1500V 2A TO3PF-3
SQS401ENW-T1_GE3
SQS401ENW-T1_GE3
Vishay Siliconix
MOSFET P-CH 40V 16A PPAK1212-8
PJD2NA60_L2_00001
PJD2NA60_L2_00001
Panjit International Inc.
600V N-CHANNEL MOSFET

Related Product By Brand

IDT12S60C
IDT12S60C
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
IRFP3710PBF
IRFP3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO247AC
BSC039N06NSATMA1
BSC039N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 19A/100A TDSON
IQE006NE2LM5ATMA1
IQE006NE2LM5ATMA1
Infineon Technologies
MOSFET N-CH 25V 41A/298A 8TSON
IRF7220
IRF7220
Infineon Technologies
MOSFET P-CH 14V 11A 8SO
KP212K1409XTMA1
KP212K1409XTMA1
Infineon Technologies
PRESSURE SENSOR
CY2305CSXC-1
CY2305CSXC-1
Infineon Technologies
IC CLK ZDB 5OUT 133MHZ 8SOIC
CY39030V208-125NTXC
CY39030V208-125NTXC
Infineon Technologies
IC CPLD 512MC 10NS 208BQFP
CY7C53150-20AXI
CY7C53150-20AXI
Infineon Technologies
IC PROCESSOR NEURON 64LQFP
CY9AFB44NBBGL-GE1
CY9AFB44NBBGL-GE1
Infineon Technologies
IC MCU 32BIT 288KB FLSH 112PFBGA
CY7C199C-20ZI
CY7C199C-20ZI
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I
S29GL064S90FHI010
S29GL064S90FHI010
Infineon Technologies
IC FLASH 64MBIT PARALLEL 64FBGA