BSO4822T
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Infineon Technologies BSO4822T

Manufacturer No:
BSO4822T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSO4822T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 12.7A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs:26.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-DSO-8
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number BSO4822T BSO4822  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta) 12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 12.7A, 10V 10mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 2V @ 55µA 2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs 26.2 nC @ 5 V 26.2 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 25 V 1640 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-DSO-8 PG-DSO-8
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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