Infineon Technologies-BSO215C - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.7A
Rds On (Max) @ Id, Vgs:	100mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:	2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:	11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	246pF @ 25V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Infineon Technologies BSO215C