Infineon Technologies-BSO211PHXUMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4A
Rds On (Max) @ Id, Vgs:	67mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1095pF @ 15V
Power - Max:	1.6W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	PG-DSO-8

Infineon Technologies BSO211PHXUMA1