BSO203SPNTMA1
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Infineon Technologies BSO203SPNTMA1

Manufacturer No:
BSO203SPNTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSO203SPNTMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 9A 8DSO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:21mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:50.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2265 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.35W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-DSO-8
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number BSO203SPNTMA1 BSO303SPNTMA1   BSO201SPNTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 8.9A (Ta) 14.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 21mOhm @ 9A, 4.5V 21mOhm @ 8.9A, 10V 8mOhm @ 14.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 100µA 2V @ 100µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50.4 nC @ 4.5 V 69 nC @ 10 V 128 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2265 pF @ 15 V 1754 pF @ 25 V 5962 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.35W (Ta) 2.35W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-DSO-8 PG-DSO-8 PG-DSO-8
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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