Infineon Technologies-BSM50GP120BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	3 Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	80 A
Power - Max:	-
Vce(on) (Max) @ Vge, Ic:	2.55V @ 15V, 50A
Current - Collector Cutoff (Max):	500 µA
Input Capacitance (Cies) @ Vce:	3.3 pF @ 25 V
Input:	Three Phase Bridge Rectifier
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies BSM50GP120BOSA1