Infineon Technologies-BSM35GP120BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	NPT
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	45 A
Power - Max:	230 W
Vce(on) (Max) @ Vge, Ic:	-
Current - Collector Cutoff (Max):	500 µA
Input Capacitance (Cies) @ Vce:	1.5 nF @ 25 V
Input:	-
NTC Thermistor:	Yes
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies BSM35GP120BOSA1