Infineon Technologies-BSM200GB120DLCE3256HOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	420 A
Power - Max:	1550 W
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 200A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	13 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies BSM200GB120DLCE3256HOSA1