Infineon Technologies-BSM10GD120DN2E3224BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Full Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	15 A
Power - Max:	80 W
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 10A
Current - Collector Cutoff (Max):	400 µA
Input Capacitance (Cies) @ Vce:	530 pF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies BSM10GD120DN2E3224BOSA1