BSL806NH6327XTSA1
  • Share:

Infineon Technologies BSL806NH6327XTSA1

Manufacturer No:
BSL806NH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSL806NH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2 N-CH 20V 2.3A TSOP6-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Rds On (Max) @ Id, Vgs:57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id:750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs:1.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds:259pF @ 10V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:PG-TSOP6-6
0 Remaining View Similar

In Stock

-
111

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSL806NH6327XTSA1 BSL306NH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.8V Drive Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 20V 30V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 2.3A
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V 57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 750mV @ 11µA 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V 1.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 259pF @ 10V 275pF @ 15V
Power - Max 500mW 500mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package PG-TSOP6-6 PG-TSOP6-6

Related Product By Categories

UPA603T-T2-A
UPA603T-T2-A
Renesas Electronics America Inc
SMALL SIGNAL P-CHANNEL MOSFET
2N7002PS,125
2N7002PS,125
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
FDG6322C
FDG6322C
onsemi
MOSFET N/P-CH 25V SC70-6
CMLDM3737 TR PBFREE
CMLDM3737 TR PBFREE
Central Semiconductor Corp
MOSFET 2N-CH 20V 0.54A SOT563
SI4204DY-T1-GE3
SI4204DY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 20V 19.8A 8-SOIC
RM4606S8
RM4606S8
Rectron USA
MOSFET N&P-CH 30V 6.5A /7A 8SOP
DMP2900UDW-7
DMP2900UDW-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT363 T&R
DMP3164LVT-13
DMP3164LVT-13
Diodes Incorporated
MOSFET BVDSS: 25V-30V TSOT26
DMN2008LFU-13
DMN2008LFU-13
Diodes Incorporated
MOSFET 2NCH 20V 14.5A UDFN2030
TPC8208(TE12L,Q,M)
TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 5A SOP8
SI6983DQ-T1-GE3
SI6983DQ-T1-GE3
Vishay Siliconix
MOSFET 2P-CH 20V 4.6A 8TSSOP
SI7940DP-T1-E3
SI7940DP-T1-E3
Vishay Siliconix
MOSFET 2N-CH 12V 7.6A PPAK SO-8

Related Product By Brand

DEMOBOARDTLE8366EVTOBO1
DEMOBOARDTLE8366EVTOBO1
Infineon Technologies
DEMOBOARD TLE8366EV
T901N32TOFXPSA1
T901N32TOFXPSA1
Infineon Technologies
SCR MODULE 3600V 29900A DO200AE
BSS80C
BSS80C
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BSD340NH6327XTSA1
BSD340NH6327XTSA1
Infineon Technologies
SMALL SIGNAL+P-CH
IPA60R380E6XKSA1
IPA60R380E6XKSA1
Infineon Technologies
MOSFET N-CH 600V 10.6A TO220-FP
IGP20N60H3XKSA1
IGP20N60H3XKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 40A TO220-3
IFX27001TF V18
IFX27001TF V18
Infineon Technologies
IC REG LINEAR 1.8V 1A TO252-3
MB90428GAVPFV-GS-278E1
MB90428GAVPFV-GS-278E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB96F645RBPMC-GS-N2E1
MB96F645RBPMC-GS-N2E1
Infineon Technologies
IC MCU 16BIT 96KB FLASH 100LQFP
S29GL512S11GHI020
S29GL512S11GHI020
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56FBGA
S29GL01GT11TFV020
S29GL01GT11TFV020
Infineon Technologies
IC FLASH 1GBIT PARALLEL 56TSOP
CY7C2170KV18-400BZC
CY7C2170KV18-400BZC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA