BSL802SNH6327XTSA1
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Infineon Technologies BSL802SNH6327XTSA1

Manufacturer No:
BSL802SNH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSL802SNH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 7.5A TSOP-6
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 2.5V
Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 2.5V
Vgs(th) (Max) @ Id:750mV @ 30µA
Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 2.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1347 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSOP6-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number BSL802SNH6327XTSA1 BSL202SNH6327XTSA1   BSL302SNH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) 7.5A (Ta) 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 7.5A, 2.5V 22mOhm @ 7.5A, 4.5V 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 750mV @ 30µA 1.2V @ 30µA 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 2.5 V 8.7 nC @ 10 V 6.6 nC @ 5 V
Vgs (Max) ±8V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1347 pF @ 10 V 1147 pF @ 10 V 750 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TSOP6-6 PG-TSOP6-6 PG-TSOP6-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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