BSL373SNH6327XTSA1
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Infineon Technologies BSL373SNH6327XTSA1

Manufacturer No:
BSL373SNH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSL373SNH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 2A TSOP-6
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 218µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:265 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSOP6-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number BSL373SNH6327XTSA1 BSL372SNH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 2A, 10V 220mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 218µA 1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V 14.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 265 pF @ 25 V 329 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSOP6-6 PG-TSOP6-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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