BSL372SNH6327XTSA1
  • Share:

Infineon Technologies BSL372SNH6327XTSA1

Manufacturer No:
BSL372SNH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSL372SNH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 2A TSOP-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:220mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs:14.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:329 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSOP6-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

-
80

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSL372SNH6327XTSA1 BSL373SNH6327XTSA1   BSL302SNH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta) 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 2A, 10V 230mOhm @ 2A, 10V 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 1.8V @ 218µA 4V @ 218µA 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V 9.3 nC @ 10 V 6.6 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 329 pF @ 25 V 265 pF @ 25 V 750 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2W (Ta) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TSOP6-6 PG-TSOP6-6 PG-TSOP6-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

SI8802DB-T2-E1
SI8802DB-T2-E1
Vishay Siliconix
MOSFET N-CH 8V 4MICROFOOT
APT10M11LVRG
APT10M11LVRG
Microchip Technology
MOSFET N-CH 100V 100A TO264
STB45N60DM2AG
STB45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A D2PAK
IXFT24N90P
IXFT24N90P
IXYS
MOSFET N-CH 900V 24A TO268
IPT60R055CFD7XTMA1
IPT60R055CFD7XTMA1
Infineon Technologies
MOSFET N-CH 600V 44A 8HSOF
IXTQ140N10P
IXTQ140N10P
IXYS
MOSFET N-CH 100V 140A TO3P
NDC651N
NDC651N
onsemi
MOSFET N-CH 30V 3.2A SUPERSOT6
IRL3714STR
IRL3714STR
Infineon Technologies
MOSFET N-CH 20V 36A D2PAK
SPP47N10
SPP47N10
Infineon Technologies
MOSFET N-CH 100V 47A TO220-3
PSMN017-30LL,115
PSMN017-30LL,115
NXP USA Inc.
MOSFET N-CH 30V 15A 8DFN
IXFN40N110Q3
IXFN40N110Q3
IXYS
MOSFET N-CH 1100V 35A SOT-227B
TSM2311CX RFG
TSM2311CX RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 4A SOT23

Related Product By Brand

SPW07N60CFD
SPW07N60CFD
Infineon Technologies
N-CHANNEL POWER MOSFET
IPP60R520C6
IPP60R520C6
Infineon Technologies
N-CHANNEL POWER MOSFET
AUIRFR2905ZTR
AUIRFR2905ZTR
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
IPB120N06S4H1ATMA1
IPB120N06S4H1ATMA1
Infineon Technologies
MOSFET N-CH 60V 120A TO263-3
IR2104S
IR2104S
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
IRS27952STRPBF
IRS27952STRPBF
Infineon Technologies
IC REG CTRLR BUCK/HALF-BRG 8SOIC
1EDB7275FXUMA1
1EDB7275FXUMA1
Infineon Technologies
DRIVER IC PG-DSO-8
TLI493DA2B6HTSA1
TLI493DA2B6HTSA1
Infineon Technologies
MAGNETIC SWITCH PROG TSOP-6-6-8
CY7C68014A-56LTXC
CY7C68014A-56LTXC
Infineon Technologies
IC MCU USB PHERIPH FX2LP 56VQFN
CY9BF167NPMC-G-MNE2
CY9BF167NPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 800KB FLASH 100LQFP
CY8C3865PVI-053
CY8C3865PVI-053
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48SSOP
CY7C1441KVE33-133AXC
CY7C1441KVE33-133AXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 100TQFP