Infineon Technologies-BSL308CH6327XTSA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	2.3A, 2A
Rds On (Max) @ Id, Vgs:	57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:	2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:	1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	275pF @ 15V
Power - Max:	500mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	PG-TSOP6-6

Infineon Technologies BSL308CH6327XTSA1