BSL307SPL6327HTSA1
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Infineon Technologies BSL307SPL6327HTSA1

Manufacturer No:
BSL307SPL6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSL307SPL6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 5.5A TSOP-6
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:805 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSOP6-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number BSL307SPL6327HTSA1 BSL207SPL6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 43mOhm @ 5.5A, 10V 41mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 40µA 1.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 20 nC @ 4.5 V
Vgs (Max) ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 805 pF @ 25 V 1007 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSOP6-6 PG-TSOP6-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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