BSL211SPT
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Infineon Technologies BSL211SPT

Manufacturer No:
BSL211SPT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSL211SPT Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 4.7A TSOP-6
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:12.4 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:654 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSOP6-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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In Stock

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400

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Similar Products

Part Number BSL211SPT BSL211SP  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta) 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V 67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 25µA 1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 4.5 V 12.4 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 654 pF @ 15 V 654 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSOP6-6 PG-TSOP6-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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