Infineon Technologies-BSL211SPL6327HTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	12.4 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	654 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSOP6-6
Package / Case:	SOT-23-6 Thin, TSOT-23-6

Infineon Technologies BSL211SPL6327HTSA1