Infineon Technologies-BSG0811NDATMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	19A, 41A
Rds On (Max) @ Id, Vgs:	3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 12V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TISON-8

Infineon Technologies BSG0811NDATMA1