Infineon Technologies-BSD840N L6327 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	880mA
Rds On (Max) @ Id, Vgs:	400mOhm @ 880mA, 2.5V
Vgs(th) (Max) @ Id:	750mV @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs:	0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds:	78pF @ 10V
Power - Max:	500mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-PO

Infineon Technologies BSD840N L6327