BSD816SNH6327
  • Share:

Infineon Technologies BSD816SNH6327

Manufacturer No:
BSD816SNH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSD816SNH6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.4A SOT363-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id:950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 2.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-6
Package / Case:6-VSSOP, SC-88, SOT-363
0 Remaining View Similar

In Stock

-
106

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSD816SNH6327 BSD816SNL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 2.5V -
Vgs(th) (Max) @ Id 950mV @ 3.7µA -
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 2.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT363-6 -
Package / Case 6-VSSOP, SC-88, SOT-363 -

Related Product By Categories

NX7002BKHH
NX7002BKHH
Nexperia USA Inc.
MOSFET N-CH 60V 350MA DFN0606-3
FDT461N
FDT461N
Fairchild Semiconductor
MOSFET N-CH 100V 540MA SOT223-4
IRFR214TRPBF
IRFR214TRPBF
Vishay Siliconix
MOSFET N-CH 250V 2.2A DPAK
STP9N65M2
STP9N65M2
STMicroelectronics
MOSFET N-CH 650V 5A TO220
STB4NK60ZT4
STB4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A D2PAK
CSD18513Q5AT
CSD18513Q5AT
Texas Instruments
MOSFET N-CH 40V 124A 8VSON
IRFS4127TRLPBF
IRFS4127TRLPBF
Infineon Technologies
MOSFET N-CH 200V 72A D2PAK
BSZ22DN20NS3G
BSZ22DN20NS3G
Infineon Technologies
BSZ22DN20 - 12V-300V N-CHANNEL P
UJ4C075033B7S
UJ4C075033B7S
UnitedSiC
750V/33MOHM, N-OFF SIC CASCODE,
NTLJF3117PTAG
NTLJF3117PTAG
onsemi
MOSFET P-CH 20V 2.3A 6WDFN
STP70N10F4
STP70N10F4
STMicroelectronics
MOSFET N-CH 100V 65A TO220-3
NP160N04TUJ-E1-AY
NP160N04TUJ-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 160A TO263-7

Related Product By Brand

IRLU3714PBF
IRLU3714PBF
Infineon Technologies
MOSFET N-CH 20V 36A I-PAK
IRF7459TRPBF
IRF7459TRPBF
Infineon Technologies
MOSFET N-CH 20V 12A 8SO
IR3556MTRPBF
IR3556MTRPBF
Infineon Technologies
IC DRIVER GATE 50A PQFN
CY22800FXC-023A
CY22800FXC-023A
Infineon Technologies
IC PROG CLOCK GEN 8-SOIC
S6E2H14F0AGV20000
S6E2H14F0AGV20000
Infineon Technologies
IC MCU 32BIT 288KB FLASH 100LQFP
MB90427GCPFV-GS-166
MB90427GCPFV-GS-166
Infineon Technologies
IC MCU 16BIT 64KB MROM 100LQFP
CY9AF312KPMC-G-JNE2
CY9AF312KPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 160KB FLASH 48LQFP
CY9BF522MBGL-GE1
CY9BF522MBGL-GE1
Infineon Technologies
IC MCU 32BIT 160KB FLASH 96FBGA
MB95F118BWPMT-G-SN-YE1
MB95F118BWPMT-G-SN-YE1
Infineon Technologies
IC MCU 8BIT 60KB FLASH 48LQFP
CY7C4215V-15ASC
CY7C4215V-15ASC
Infineon Technologies
IC SYNC FIFO MEM 512X18 64LQFP
S25FL064LABMFB003
S25FL064LABMFB003
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 16SOIC
CY7C1145KV18-400BZXI
CY7C1145KV18-400BZXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA