BSD816SNH6327
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Infineon Technologies BSD816SNH6327

Manufacturer No:
BSD816SNH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSD816SNH6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.4A SOT363-6
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id:950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 2.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-6
Package / Case:6-VSSOP, SC-88, SOT-363
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Similar Products

Part Number BSD816SNH6327 BSD816SNL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 2.5V -
Vgs(th) (Max) @ Id 950mV @ 3.7µA -
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 2.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT363-6 -
Package / Case 6-VSSOP, SC-88, SOT-363 -

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