BSD816SNH6327
  • Share:

Infineon Technologies BSD816SNH6327

Manufacturer No:
BSD816SNH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSD816SNH6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.4A SOT363-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id:950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 2.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-6
Package / Case:6-VSSOP, SC-88, SOT-363
0 Remaining View Similar

In Stock

-
106

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSD816SNH6327 BSD816SNL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 2.5V -
Vgs(th) (Max) @ Id 950mV @ 3.7µA -
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 2.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT363-6 -
Package / Case 6-VSSOP, SC-88, SOT-363 -

Related Product By Categories

FDU6676AS
FDU6676AS
Fairchild Semiconductor
MOSFET N-CH 30V 90A IPAK
PJA3416AE_R1_00001
PJA3416AE_R1_00001
Panjit International Inc.
SOT-23, MOSFET
NTP6412ANG
NTP6412ANG
onsemi
MOSFET N-CH 100V 58A TO220AB
DMP2045U-7
DMP2045U-7
Diodes Incorporated
MOSFET P-CH 20V 4.3A SOT23
ZXMN6A07ZTA
ZXMN6A07ZTA
Diodes Incorporated
MOSFET N-CH 60V 1.9A SOT89-3
RM2N650LD
RM2N650LD
Rectron USA
MOSFET N-CHANNEL 650V 2A TO252-2
IPB80N04S2-H4ATMA2
IPB80N04S2-H4ATMA2
Infineon Technologies
N-CHANNEL POWER MOSFET
AOWF600A70F
AOWF600A70F
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 8.5A TO262F
IRL3715
IRL3715
Infineon Technologies
MOSFET N-CH 20V 54A TO220AB
FQD5N20TF
FQD5N20TF
onsemi
MOSFET N-CH 200V 3.8A DPAK
DMN2170U-7
DMN2170U-7
Diodes Incorporated
MOSFET N-CH 20V 2.3A SOT23-3
IRF1405ZSPBF
IRF1405ZSPBF
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK

Related Product By Brand

BAT6806E6327HTSA1
BAT6806E6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT23-3
IRF7233
IRF7233
Infineon Technologies
MOSFET P-CH 12V 9.5A 8SO
IRLHM620TR2PBF
IRLHM620TR2PBF
Infineon Technologies
MOSFET N-CH 20V 26A PQFN
IRF7821TRPBF-1
IRF7821TRPBF-1
Infineon Technologies
MOSFET N-CH 30V 13.6A 8SO
IKP20N65F5XKSA1
IKP20N65F5XKSA1
Infineon Technologies
IGBT TRENCH 650V 42A TO220-3
SAL-XC886CLM-8FFA5VAC
SAL-XC886CLM-8FFA5VAC
Infineon Technologies
XC800 I-FAMILY MICROCONTROLLER ,
HYB25L512160AC-7.5
HYB25L512160AC-7.5
Infineon Technologies
SYNCHRONOUS DRAM, 32MX16, 8NS
BTS117 E3045A
BTS117 E3045A
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-3
MB90349ASPMC-GS-211E1
MB90349ASPMC-GS-211E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
CY7C1312LV18-300BZXI
CY7C1312LV18-300BZXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
CY7C1471V33-133AXCT
CY7C1471V33-133AXCT
Infineon Technologies
IC SRAM 72MBIT PARALLEL 100TQFP
CY39C031WQN-G-341-JNEFE1
CY39C031WQN-G-341-JNEFE1
Infineon Technologies
IC REG TRPL BUCK/LNR SYNC 28QFN