BSD316SNH6327XTSA1
  • Share:

Infineon Technologies BSD316SNH6327XTSA1

Manufacturer No:
BSD316SNH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSD316SNH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 1.4A SOT363-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:94 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-PO
Package / Case:6-VSSOP, SC-88, SOT-363
0 Remaining View Similar

In Stock

$0.51
460

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSD316SNH6327XTSA1 BSD816SNH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 10V 160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id 2V @ 3.7µA 0.95V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 5 V 0.6 nC @ 2.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 94 pF @ 15 V 180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT363-PO PG-SOT363-6
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363

Related Product By Categories

IRF630
IRF630
Harris Corporation
MOSFET N-CH 200V 9A TO220AB
IPP60R600CP
IPP60R600CP
Infineon Technologies
N-CHANNEL POWER MOSFET
2SK1838L-E
2SK1838L-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IXTP2N65X2
IXTP2N65X2
IXYS
MOSFET N-CH 650V 2A TO220
IXTP64N10L2
IXTP64N10L2
IXYS
MOSFET N-CH 100V 64A TO220AB
DMN53D0L-13
DMN53D0L-13
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
DMP3056L-13
DMP3056L-13
Diodes Incorporated
MOSFET P-CH 30V 4.3A SOT23
VN2460N3-G-P014
VN2460N3-G-P014
Microchip Technology
MOSFET N-CH 600V 160MA TO92-3
BUK7909-75ATE,127
BUK7909-75ATE,127
Nexperia USA Inc.
MOSFET N-CH 75V 75A TO220-5
IRLR120NPBF
IRLR120NPBF
Infineon Technologies
MOSFET N-CH 100V 10A DPAK
IRFH8321TRPBF
IRFH8321TRPBF
Infineon Technologies
MOSFET N CH 30V 21A PQFN5X6
BUK9509-55A,127
BUK9509-55A,127
NXP USA Inc.
MOSFET N-CH 55V 75A TO220AB

Related Product By Brand

IM393S6FXKLA1
IM393S6FXKLA1
Infineon Technologies
POWER MODULE 600V 6A MDIP22
IST019N08NM5AUMA1
IST019N08NM5AUMA1
Infineon Technologies
TRENCH 40<-<100V PG-HSOF-5
IRFR18N15D
IRFR18N15D
Infineon Technologies
MOSFET N-CH 150V 18A DPAK
IRF6613TR1PBF
IRF6613TR1PBF
Infineon Technologies
MOSFET N-CH 40V 23A DIRECTFET
IPB60R600P6ATMA1
IPB60R600P6ATMA1
Infineon Technologies
MOSFET N-CH 600V 7.3A D2PAK
CY8CKIT-019
CY8CKIT-019
Infineon Technologies
EVAL KIT PSOC SHIELD ADAPT
CY2CC810OXI-1
CY2CC810OXI-1
Infineon Technologies
IC CLK BUFFER 1:10 650MHZ 20SSOP
CY2309CSXI-1T
CY2309CSXI-1T
Infineon Technologies
IC CLK ZDB 9OUT 133MHZ 16SOIC
MB96F346RWCPQC-GSE2
MB96F346RWCPQC-GSE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 100PQFP
CY9BF524LPMC-G-MNE2
CY9BF524LPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 64LQFP
CY7C1021DV33-10ZSXI
CY7C1021DV33-10ZSXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
CY7C2262XV18-450BZXC
CY7C2262XV18-450BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA