BSD235CH6327XTSA1
  • Share:

Infineon Technologies BSD235CH6327XTSA1

Manufacturer No:
BSD235CH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSD235CH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 20V SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:950mA, 530mA
Rds On (Max) @ Id, Vgs:350mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs:0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:47pF @ 10V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-6-1
0 Remaining View Similar

In Stock

$0.52
178

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSD235CH6327XTSA1 BSD235NH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N and P-Channel 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 950mA, 530mA 950mA
Rds On (Max) @ Id, Vgs 350mOhm @ 950mA, 4.5V 350mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1.6µA 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs 0.34nC @ 4.5V 0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 47pF @ 10V 63pF @ 10V
Power - Max 500mW 500mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6-1 PG-SOT363-PO

Related Product By Categories

FDR8508P
FDR8508P
Fairchild Semiconductor
SMALL SIGNAL P-CHANNEL MOSFET
2SK2631-TL-E
2SK2631-TL-E
Sanyo
POWER MOSFET
IRF9362TRPBF
IRF9362TRPBF
Infineon Technologies
MOSFET 2P-CH 30V 8A 8SOIC
DMG1023UV-7
DMG1023UV-7
Diodes Incorporated
MOSFET 2P-CH 20V 1.03A SOT563
EPC2110ENGRT
EPC2110ENGRT
EPC
GAN TRANS 2N-CH 120V BUMPED DIE
DMN3055LFDBQ-7
DMN3055LFDBQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
DMN5L06DWK-7-01
DMN5L06DWK-7-01
Diodes Incorporated
MOSFET BVDSS: 41V-60V SOT363
IPG20N06S4L11AATMA1
IPG20N06S4L11AATMA1
Infineon Technologies
MOSFET 2N-CH 8TDSON
SMA5125
SMA5125
Sanken
MOSFET 3N/3P-CH 60V 10A 12-SIP
SI4340DY-T1-E3
SI4340DY-T1-E3
Vishay Siliconix
MOSFET 2N-CH 20V 7.3A 14SO
SIL2623-TP
SIL2623-TP
Micro Commercial Co
MOSFET 2 P-CH 30V 3A SOT23-6L
GE17045EEA3
GE17045EEA3
General Electric
1700V 425A SiC Six-Pack Module

Related Product By Brand

DD200S33K2CNOSA1
DD200S33K2CNOSA1
Infineon Technologies
RECTIFIER DIODE MOD 3300V 200A
BBY 56-02W E6127
BBY 56-02W E6127
Infineon Technologies
DIODE TUNING 10V 20MA SCD-80
IPI120N04S402AKSA1
IPI120N04S402AKSA1
Infineon Technologies
MOSFET N-CH 40V 120A TO262-3
IRF9530NSTRR
IRF9530NSTRR
Infineon Technologies
MOSFET P-CH 100V 14A D2PAK
FX161CJ16F40FBBXT
FX161CJ16F40FBBXT
Infineon Technologies
LEGACY 16-BIT MCU
ILD4180XUMA1
ILD4180XUMA1
Infineon Technologies
IC LED DRVR RGLTR PWM 1.8A 8DSO
BTS707
BTS707
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-20
IRS279524STRPBF
IRS279524STRPBF
Infineon Technologies
IC REG CTRLR BCK/HALF-BRG 14SOIC
IRU1206-25CDTR
IRU1206-25CDTR
Infineon Technologies
IC REG LINEAR 2.5V 1A DPAK
CY8C3665PVI-080
CY8C3665PVI-080
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48SSOP
CY62127DV30LL-55BVXI
CY62127DV30LL-55BVXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 48VFBGA
CY7C1412BV18-200BZC
CY7C1412BV18-200BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA