Infineon Technologies-BSD223P L6327 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	390mA
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 1.5µA
Gate Charge (Qg) (Max) @ Vgs:	0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	56pF @ 15V
Power - Max:	250mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-PO

Infineon Technologies BSD223P L6327