BSD214SN L6327
  • Share:

Infineon Technologies BSD214SN L6327

Manufacturer No:
BSD214SN L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSD214SN L6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.5A SOT363-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:143 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-PO
Package / Case:6-VSSOP, SC-88, SOT-363
0 Remaining View Similar

In Stock

-
371

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSD214SN L6327 BSD214SNL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 3.7µA -
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 143 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT363-PO -
Package / Case 6-VSSOP, SC-88, SOT-363 -

Related Product By Categories

MSC130SM120JCU3
MSC130SM120JCU3
Microchip Technology
SICFET N-CH 1.2KV 173A SOT227
IRF9520SPBF
IRF9520SPBF
Vishay Siliconix
MOSFET P-CH 100V 6.8A D2PAK
FDS6570A
FDS6570A
onsemi
MOSFET N-CH 20V 15A 8SOIC
RM2301E
RM2301E
Rectron USA
MOSFET P-CHANNEL 20V 2.6A SOT23
FQPF4N80
FQPF4N80
Fairchild Semiconductor
MOSFET N-CH 800V 2.2A TO220F
IRLR120TRR
IRLR120TRR
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
IRF1503PBF
IRF1503PBF
Infineon Technologies
MOSFET N-CH 30V 75A TO220AB
NTZS3151PT5G
NTZS3151PT5G
onsemi
MOSFET P-CH 20V 860MA SOT563
IPP80N06S4L05AKSA1
IPP80N06S4L05AKSA1
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
NTD4969N-1G
NTD4969N-1G
onsemi
MOSFET N-CH 30V 41A IPAK-4
SI5475DC-T1-E3
SI5475DC-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 5.5A 1206-8
TSM1N45DCS RLG
TSM1N45DCS RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 450V 500MA 8SOP

Related Product By Brand

BUZ111S
BUZ111S
Infineon Technologies
N-CHANNEL POWER MOSFET
IRL3714TR
IRL3714TR
Infineon Technologies
MOSFET N-CH 20V 36A TO220AB
IRF7805APBF
IRF7805APBF
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
SPB73N03S2L-08 G
SPB73N03S2L-08 G
Infineon Technologies
MOSFET N-CH 30V 73A TO263-3
IRG4RC10SDTRPBF
IRG4RC10SDTRPBF
Infineon Technologies
IGBT 600V 14A 38W DPAK
XE167F72F66LACFXQMA1
XE167F72F66LACFXQMA1
Infineon Technologies
IC MCU 16BIT 576KB FLASH 144LQFP
IR2159
IR2159
Infineon Technologies
IC BALLAST CNTRL 95KHZ 16DIP
CY25811ZXCT
CY25811ZXCT
Infineon Technologies
IC CLOCK GEN 3.3V SS 8-TSSOP
MB89636RPF-G-1389-BNDE1
MB89636RPF-G-1389-BNDE1
Infineon Technologies
IC MCU 8BIT 24KB MROM 64QFP
MB89637P-GT-194-SH
MB89637P-GT-194-SH
Infineon Technologies
IC MCU 8BIT 32KB MROM 64-SH-DIP
CY7C1264XV18-450BZXC
CY7C1264XV18-450BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
S25FL128LAGNFI011
S25FL128LAGNFI011
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 8WSON