BSD214SN L6327
  • Share:

Infineon Technologies BSD214SN L6327

Manufacturer No:
BSD214SN L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSD214SN L6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.5A SOT363-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:143 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-PO
Package / Case:6-VSSOP, SC-88, SOT-363
0 Remaining View Similar

In Stock

-
371

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSD214SN L6327 BSD214SNL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 3.7µA -
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 143 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT363-PO -
Package / Case 6-VSSOP, SC-88, SOT-363 -

Related Product By Categories

IRF510SPBF
IRF510SPBF
Vishay Siliconix
MOSFET N-CH 100V 5.6A D2PAK
SSM3J118TU(TE85L)
SSM3J118TU(TE85L)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 1.4A UFM
IRFH5210TRPBF
IRFH5210TRPBF
Infineon Technologies
MOSFET N-CH 100V 10A/55A 8PQFN
FQP34N20
FQP34N20
onsemi
MOSFET N-CH 200V 31A TO220-3
AOD6N50
AOD6N50
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 5.3A TO252
NVMFS5C460NLWFAFT3G
NVMFS5C460NLWFAFT3G
onsemi
MOSFET N-CH 40V 21A/78A 5DFN
IRF7233TR
IRF7233TR
Infineon Technologies
MOSFET P-CH 12V 9.5A 8SO
IRFZ44VZ
IRFZ44VZ
Infineon Technologies
MOSFET N-CH 60V 57A TO220AB
IRF4104S
IRF4104S
Infineon Technologies
MOSFET N-CH 40V 75A D2PAK
APT20M22B2VFRG
APT20M22B2VFRG
Microsemi Corporation
MOSFET N-CH 200V 100A T-MAX
STF13NM50N
STF13NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
RCX081N20
RCX081N20
Rohm Semiconductor
MOSFET N-CH 200V 8A TO220FM

Related Product By Brand

BB 664 H7902
BB 664 H7902
Infineon Technologies
VARIABLE CAPACITANCE DIODE
IRFR1018ETRPBF
IRFR1018ETRPBF
Infineon Technologies
MOSFET N-CH 60V 56A DPAK
BUZ101SL
BUZ101SL
Infineon Technologies
N-CHANNEL POWER MOSFET
IRF9520NSTRL
IRF9520NSTRL
Infineon Technologies
MOSFET P-CH 100V 6.8A D2PAK
IRF7805PBF
IRF7805PBF
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
IRG4BC10SD-S
IRG4BC10SD-S
Infineon Technologies
IGBT 600V 14A 38W D2PAK
MB91F467CBPMCR-GS-N2K5E2
MB91F467CBPMCR-GS-N2K5E2
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
MB95F778MPMC2-G-SNE2
MB95F778MPMC2-G-SNE2
Infineon Technologies
IC MCU 8BIT 60KB FLASH 64LQFP
MB89653ARPF-G-367-BNDE1
MB89653ARPF-G-367-BNDE1
Infineon Technologies
IC MCU 8BIT 8KB MROM 100QFP
S25FL512SAGBHV213
S25FL512SAGBHV213
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 24BGA
S29GL01GT11DHAV20
S29GL01GT11DHAV20
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
CYBL11172-56LQXIT
CYBL11172-56LQXIT
Infineon Technologies
IC RF TXRX+MCU BLUETOOTH 56UFQFN