BSD214SN L6327
  • Share:

Infineon Technologies BSD214SN L6327

Manufacturer No:
BSD214SN L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSD214SN L6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.5A SOT363-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:143 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-PO
Package / Case:6-VSSOP, SC-88, SOT-363
0 Remaining View Similar

In Stock

-
371

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSD214SN L6327 BSD214SNL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 3.7µA -
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 143 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT363-PO -
Package / Case 6-VSSOP, SC-88, SOT-363 -

Related Product By Categories

BSC052N03LSATMA1
BSC052N03LSATMA1
Infineon Technologies
MOSFET N-CH 30V 17A/57A TDSON
SSM3J145TU,LF
SSM3J145TU,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 3A UFM
IPI50R299CP
IPI50R299CP
Infineon Technologies
N-CHANNEL POWER MOSFET
G06N10
G06N10
Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3
IRFR420T
IRFR420T
Fairchild Semiconductor
2.5A, 500V, 3OHM, N-CHANNEL MOSF
IRF7749L1TRPBF
IRF7749L1TRPBF
Infineon Technologies
MOSFET N-CH 60V 33A DIRECTFET
MCAC68N03Y-TP
MCAC68N03Y-TP
Micro Commercial Co
N-CHANNEL MOSFET, DFN5060
SIDR638DP-T1-RE3
SIDR638DP-T1-RE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET
APT20M18B2VFRG
APT20M18B2VFRG
Microchip Technology
MOSFET N-CH 200V 100A T-MAX
APT10M11JVRU2
APT10M11JVRU2
Microchip Technology
MOSFET N-CH 100V 142A SOT227
SFT1345-H
SFT1345-H
onsemi
MOSFET P-CH 100V 11A TP
CMS01P10T-HF
CMS01P10T-HF
Comchip Technology
MOSFET P-CH 100V 1.2A SOT23

Related Product By Brand

IRLMS6802TRPBF
IRLMS6802TRPBF
Infineon Technologies
MOSFET P-CH 20V 5.6A MICRO6
IPA60R280P7SXKSA1
IPA60R280P7SXKSA1
Infineon Technologies
MOSFET N-CH 600V 12A TO220
IRF7460
IRF7460
Infineon Technologies
MOSFET N-CH 20V 12A 8SO
IPP10N03LB G
IPP10N03LB G
Infineon Technologies
MOSFET N-CH 30V 50A TO220-3
FS100R12W3T7B11BPSA1
FS100R12W3T7B11BPSA1
Infineon Technologies
LOW POWER EASY AG-EASY3B-711
IR2175STRPBF
IR2175STRPBF
Infineon Technologies
IC CURRENT SENSE 0.5% 8SOIC
CY62148BLL-70SXC
CY62148BLL-70SXC
Infineon Technologies
IC SRAM 4MBIT PARALLEL 32SOIC
CY7C1019CV33-10ZXAT
CY7C1019CV33-10ZXAT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32TSOP II
S25FL204K0TMFI013
S25FL204K0TMFI013
Infineon Technologies
IC FLASH 4MBIT SPI 85MHZ 8SOIC
CY14B256LA-SZ25XIT
CY14B256LA-SZ25XIT
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC
S25FL132K0XMFN013
S25FL132K0XMFN013
Infineon Technologies
IC FLASH 32MBIT SPI/QUAD 8SOIC
S34MS01G100BHB003
S34MS01G100BHB003
Infineon Technologies
IC FLASH 1GBIT PARALLEL 63BGA