BSD214SN L6327
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Infineon Technologies BSD214SN L6327

Manufacturer No:
BSD214SN L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSD214SN L6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.5A SOT363-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:143 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT363-PO
Package / Case:6-VSSOP, SC-88, SOT-363
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Similar Products

Part Number BSD214SN L6327 BSD214SNL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 3.7µA -
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 143 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT363-PO -
Package / Case 6-VSSOP, SC-88, SOT-363 -

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