BSC900N20NS3GATMA1
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Infineon Technologies BSC900N20NS3GATMA1

Manufacturer No:
BSC900N20NS3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC900N20NS3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 15.2A TDSON-8
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:11.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
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$2.32
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Similar Products

Part Number BSC900N20NS3GATMA1 BSC500N20NS3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 15.2A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 7.6A, 10V 50mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 100 V 1580 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 62.5W (Tc) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

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