BSC883N03MSG
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Infineon Technologies BSC883N03MSG

Manufacturer No:
BSC883N03MSG
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSC883N03MSG Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$0.35
1,882

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Similar Products

Part Number BSC883N03MSG BSC889N03MSG   BSC884N03MSG   BSC882N03MSG   BSC883N03LSG  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
FET Type - - N-Channel - -
Technology - - MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) - - 34 V - -
Current - Continuous Drain (Id) @ 25°C - - 17A (Ta), 85A (Tc) - -
Drive Voltage (Max Rds On, Min Rds On) - - 4.5V, 10V - -
Rds On (Max) @ Id, Vgs - - 4.5mOhm @ 30A, 10V - -
Vgs(th) (Max) @ Id - - 2V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs - - 34 nC @ 10 V - -
Vgs (Max) - - ±20V - -
Input Capacitance (Ciss) (Max) @ Vds - - 2700 pF @ 15 V - -
FET Feature - - - - -
Power Dissipation (Max) - - 2.5W (Ta), 50W (Tc) - -
Operating Temperature - - -55°C ~ 150°C (TJ) - -
Mounting Type - - Surface Mount - -
Supplier Device Package - - PG-TDSON-8-1 - -
Package / Case - - 8-PowerTDFN - -

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