BSC882N03MSG
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Infineon Technologies BSC882N03MSG

Manufacturer No:
BSC882N03MSG
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSC882N03MSG Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$0.47
1,920

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Similar Products

Part Number BSC882N03MSG BSC889N03MSG   BSC883N03MSG   BSC884N03MSG   BSC882N03LSG  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
FET Type - - - N-Channel -
Technology - - - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) - - - 34 V -
Current - Continuous Drain (Id) @ 25°C - - - 17A (Ta), 85A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) - - - 4.5V, 10V -
Rds On (Max) @ Id, Vgs - - - 4.5mOhm @ 30A, 10V -
Vgs(th) (Max) @ Id - - - 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - - - 34 nC @ 10 V -
Vgs (Max) - - - ±20V -
Input Capacitance (Ciss) (Max) @ Vds - - - 2700 pF @ 15 V -
FET Feature - - - - -
Power Dissipation (Max) - - - 2.5W (Ta), 50W (Tc) -
Operating Temperature - - - -55°C ~ 150°C (TJ) -
Mounting Type - - - Surface Mount -
Supplier Device Package - - - PG-TDSON-8-1 -
Package / Case - - - 8-PowerTDFN -

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