BSC882N03LSGATMA1
  • Share:

Infineon Technologies BSC882N03LSGATMA1

Manufacturer No:
BSC882N03LSGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC882N03LSGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 34V 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):34 V
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$0.87
806

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC882N03LSGATMA1 BSC886N03LSGATMA1   BSC883N03LSGATMA1   BSC882N03MSGATMA1   BSC889N03LSGATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Not For New Designs Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34 V 30 V 34 V 34 V 30 V
Current - Continuous Drain (Id) @ 25°C - 13A (Ta), 65A (Tc) 17A (Ta), 98A (Tc) 22A (Ta), 100A (Tc) 13A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V 6mOhm @ 30A, 10V 3.8mOhm @ 30A, 10V 2.6mOhm @ 30A, 10V 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 26 nC @ 10 V 34 nC @ 10 V 55 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 15 V 2100 pF @ 15 V 2800 pF @ 15 V 4300 pF @ 15 V 1300 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) - 2.5W (Ta), 39W (Tc) 2.5W (Ta), 57W (Tc) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

AON2290
AON2290
Alpha & Omega Semiconductor Inc.
MOSFET N CH 100V 4.5A DFN 2X2B
NTH4L160N120SC1
NTH4L160N120SC1
onsemi
SICFET N-CH 1200V 17.3A TO247
IPAN80R280P7XKSA1
IPAN80R280P7XKSA1
Infineon Technologies
MOSFET N-CH 800V 17A TO220
STD12N65M2
STD12N65M2
STMicroelectronics
MOSFET N-CH 650V 8A DPAK
SUM65N20-30-E3
SUM65N20-30-E3
Vishay Siliconix
MOSFET N-CH 200V 65A TO263
STP6N95K5
STP6N95K5
STMicroelectronics
MOSFET N-CH 950V 9A TO220-3
FQP2P25
FQP2P25
Fairchild Semiconductor
MOSFET P-CH 250V 2.3A TO220-3
DMN3730UFB4-7B
DMN3730UFB4-7B
Diodes Incorporated
MOSFET N-CH 30V 750MA 3DFN
DMN6075SQ-7
DMN6075SQ-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT23 T&R
DMN5L06-7
DMN5L06-7
Diodes Incorporated
MOSFET N-CH 50V 280MA SOT23-3
TK50P04M1(T6RSS-Q)
TK50P04M1(T6RSS-Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 50A DP
IRFD9123PBF
IRFD9123PBF
Vishay Siliconix
MOSFET P-CH 100V 1A 4DIP

Related Product By Brand

IDH08G65C5XKSA2
IDH08G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 8A TO220-2-1
BSC105N10LSFGATMA1
BSC105N10LSFGATMA1
Infineon Technologies
MOSFET N-CH 100V 11.4/90A 8TDSON
IRF5806
IRF5806
Infineon Technologies
MOSFET P-CH 20V 4A MICRO6
IRF9Z24NLPBF
IRF9Z24NLPBF
Infineon Technologies
MOSFET P-CH 55V 12A TO262
IRGS8B60KPBF
IRGS8B60KPBF
Infineon Technologies
IRGS8B60 - DISCRETE IGBT WITHOUT
BTS50060-1TEA
BTS50060-1TEA
Infineon Technologies
IC PWR SWITCH P-CHAN 1:1 TO252-5
BTS410E2 E3062A
BTS410E2 E3062A
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO263-5
MB90423GAVPF-GS-313
MB90423GAVPF-GS-313
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
S29GL256S10DHI013
S29GL256S10DHI013
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA
CY7C1312KV18-250BZXC
CY7C1312KV18-250BZXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
CY7C1061BV33-8ZXI
CY7C1061BV33-8ZXI
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II
S29GL128P90TFCR23
S29GL128P90TFCR23
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP