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BSC750N10NDGATMA1
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Infineon Technologies BSC750N10NDGATMA1

Manufacturer No:
BSC750N10NDGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC750N10NDGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 100V 3.2A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:3.2A
Rds On (Max) @ Id, Vgs:75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:720pF @ 50V
Power - Max:26W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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