Infineon Technologies-BSC750N10NDGATMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	3.2A
Rds On (Max) @ Id, Vgs:	75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:	4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	720pF @ 50V
Power - Max:	26W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

Infineon Technologies BSC750N10NDGATMA1