BSC240N12NS3G
  • Share:

Infineon Technologies BSC240N12NS3G

Manufacturer No:
BSC240N12NS3G
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSC240N12NS3G Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 60 V
FET Feature:- 
Power Dissipation (Max):66W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

-
569

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC240N12NS3G BSC240N12NS3 G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V 120 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 31A, 10V 24mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 35µA 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 60 V 1900 pF @ 60 V
FET Feature - -
Power Dissipation (Max) 66W (Tc) 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

STD2N62K3
STD2N62K3
STMicroelectronics
MOSFET N-CH 620V 2.2A DPAK
NP80N04MLG-S18-AY
NP80N04MLG-S18-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 80A TO220
SI3460BDV-T1-E3
SI3460BDV-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 8A 6TSOP
SUD80460E-GE3
SUD80460E-GE3
Vishay Siliconix
MOSFET N-CH 150V 42A TO252AA
PJW3P06A-AU_R2_000A1
PJW3P06A-AU_R2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
TSM126CX RFG
TSM126CX RFG
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 30MA SOT23
SI7634BDP-T1-E3
SI7634BDP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
IRFR9020TRL
IRFR9020TRL
Vishay Siliconix
MOSFET P-CH 50V 9.9A DPAK
SI4462DY-T1-E3
SI4462DY-T1-E3
Vishay Siliconix
MOSFET N-CH 200V 1.15A 8-SOIC
BSR315PL6327HTSA1
BSR315PL6327HTSA1
Infineon Technologies
MOSFET P-CH 60V 620MA SC59
AUIRFP064N
AUIRFP064N
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
PH2230DLSX
PH2230DLSX
Nexperia USA Inc.
MOSFET N-CH LFPAK5 POWER-SO8

Related Product By Brand

BSC200P03LSG
BSC200P03LSG
Infineon Technologies
P-CHANNEL POWER MOSFET
BUZ102SL
BUZ102SL
Infineon Technologies
N-CHANNEL POWER MOSFET
XC2365A104F80LAAKXUMA1
XC2365A104F80LAAKXUMA1
Infineon Technologies
IC MCU 16/32B 832KB FLSH 100LQFP
BGA8H1BN6E6327XTSA1
BGA8H1BN6E6327XTSA1
Infineon Technologies
IC AMP 1.805GHZ-2.69GHZ TSNP6-2
CY8CKIT-012
CY8CKIT-012
Infineon Technologies
KIT PSOC PROTO&DEV EXPANSION BD
CY9BF129TABGL-GK7E1
CY9BF129TABGL-GK7E1
Infineon Technologies
IC MCU 32B 1.5625MB FLSH 192FBGA
MB90F349CAPFR-GS
MB90F349CAPFR-GS
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP
MB90428GAVPMC-GS-289E1
MB90428GAVPMC-GS-289E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90561APMC-G-345-BNDE1
MB90561APMC-G-345-BNDE1
Infineon Technologies
IC MCU 16BIT 32KB MROM 64LQFP
S70FL256P0XMFI003
S70FL256P0XMFI003
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
S29GL128S90TFI013
S29GL128S90TFI013
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP
S25FL164K0XBHV030
S25FL164K0XBHV030
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 24BGA