Infineon Technologies-BSC196N10NSGATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	19.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:	4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs:	34 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2300 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	78W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-1
Package / Case:	8-PowerTDFN

Infineon Technologies BSC196N10NSGATMA1