BSC190N12NS3GATMA1
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Infineon Technologies BSC190N12NS3GATMA1

Manufacturer No:
BSC190N12NS3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC190N12NS3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 120V 8.6A/44A TDSON
Delivery:
Payment:
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iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:8.6A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19mOhm @ 39A, 10V
Vgs(th) (Max) @ Id:4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 60 V
FET Feature:- 
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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$1.95
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Similar Products

Part Number BSC190N12NS3GATMA1 BSC190N15NS3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V 150 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta), 44A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 8V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 39A, 10V 19mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 42µA 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 60 V 2420 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 69W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

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